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1SS403E Silicon Epitaxial Planar Switching Diodes

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Description

Switching Diodes Silicon Epitaxial Planar 1SS403E 1.Applications * Ultra-High-Speed Switching 2..

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Datasheet Specifications

Part number
1SS403E
Manufacturer
Toshiba ↗
File Size
171.06 KB
Datasheet
1SS403E-Toshiba.pdf
Description
Silicon Epitaxial Planar Switching Diodes

Features

* (1) Small package (2) Low reverse current. : IR(2) = 1.0 µA (max) (3) Small total capacitance: Ct = 3.0 pF (max) 3. Packaging and Internal Circuit 1SS403E 1: Cathode 2: Anode ESC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Uni

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