1SS403E - Silicon Epitaxial Planar Switching Diodes

Toshiba

Datasheet Details

Part number	1SS403E
Manufacturer	Toshiba ↗
File Size	171.06 KB
Description	Silicon Epitaxial Planar Switching Diodes
Datasheet	1SS403E-Toshiba.pdf

(1) Small package (2) Low reverse current. : IR(2) = 1.0 µA (max) (3) Small total capacitance: Ct = 3.0 pF (max) 3. Packaging and Internal Circuit 1SS403E 1: Cathode 2: Anode ESC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 250 V Reverse voltage VR 200 V Peak forward current IFM 300 mA Average rectified current IO 100 mA Non-repetitive peak forward surge current IFSM (Note 1).

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Published: May 19, 2024 |