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1SS403E Datasheet - Toshiba

1SS403E Silicon Epitaxial Planar Switching Diodes

1SS403E Features

* (1) Small package (2) Low reverse current. : IR(2) = 1.0 µA (max) (3) Small total capacitance: Ct = 3.0 pF (max) 3. Packaging and Internal Circuit 1SS403E 1: Cathode 2: Anode ESC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Uni

1SS403E-Toshiba.pdf

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Datasheet Details

Part number:

1SS403E

Manufacturer:

Toshiba ↗

File Size:

171.06 KB

Description:

Silicon epitaxial planar switching diodes.

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1SS403E 1SS403E Silicon Epitaxial Planar Switching Diodes Toshiba

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