1SS406 Datasheet (Toshiba) - Schottky Barrier Diode

1SS406, Schottky Barrier Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS406 High Speed Switching Application 1SS406 Unit: mm z Low forward voltage z Low reverse current z Small total capacitance : VF (3) = 0.50V (typ.) : IR= 0.5μA (max) : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 100 mA Average forward current Surge current (10ms) Power dissipation IO