1SS413 Datasheet - Toshiba

1SS413 Schottky Barrier Diode

Schottky Barrier Diode Silicon Epitaxial 1SS413 1. Applications High-Speed Switching 2. Packaging and Internal Circuit SOD-923 fSC 1SS413 1: Cathode 2: Anode 1: Cathode 2: Anode ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2002-11 2021-12-16 Rev.4.0 1SS413 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 25 V Reverse voltage VR 20 .

1SS413-Toshiba.pdf