1SS422 Datasheet (Toshiba) - Silicon Epitaxial Schottky Barrier Type Diode

1SS422, Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications Low forward voltage VF(2) = 0.23 V (typ.) @ IF = 5 mA Small package suitable for mounting on a small space 1SS422 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation Junction temperature Storage temperature range Op