1SS422 Silicon Epitaxial Schottky Barrier Type Diode

Toshiba

Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications * Low forward voltage VF(2) = 0.23 V (typ.) @ IF = .

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Datasheet Specifications

Part number: 1SS422
Manufacturer: Toshiba ↗
File Size: 316.98 KB
Datasheet: 1SS422-Toshiba.pdf
Description: Silicon Epitaxial Schottky Barrier Type Diode

Applications

* Low forward voltage VF(2) = 0.23 V (typ. ) @ IF = 5 mA
* Small package suitable for mounting on a small space 1SS422 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average

1SS422 Distributors

📁 Related Datasheet

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1SS422 Silicon Epitaxial Schottky Barrier Type Diode Toshiba

Toshiba 1SS422-like datasheet