1SS422
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Silicon epitaxial schottky barrier type diode.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS422
High-Speed Switching Applications
* Low forward voltage VF(2) = 0.23 V (typ.) @ IF = .
📁 Related Datasheet
1SS420 - Silicon Epitaxial Schottky Barrier Type Diode
(Toshiba)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS420
High-Speed Switching Applications
• Low reverse current: IR = 5 μA (max)
1SS420
Unit: mm.
1SS420CT - Silicon Diode
(Toshiba)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS420CT
High-Speed Switching Applications
• Low reverse current: IR = 5 μA (max)
0.6±0.05
1S.
1SS421 - Silicon Epitaxial Schottky Barrier Type Diode
(Toshiba)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS421
1SS421
High-Speed Switching Application
Unit: mm
Low forward voltage: VF (3) = 0.50V .
1SS422 - High speed Switching Diode
(GME)
High speed Switching Diode
FEATURES
High reliability with high surge current handing capability.
Small package. High speed.
Pb
Lead-free
Prod.
1SS422 - SURFACE MOUNT FAST SWITCHING DIODE
(WON-TOP)
® WON-TOP ELECTRONICS
1SS422
SURFACE MOUNT FAST SWITCHING DIODE
Pb
Features
Silicon Epitaxial Planar Die Construction
Fast Switching Speed Sur.
1SS422 - High Speed Switching Diode
(TRANSYS)
Transys
Electronics
LIMITED
SOD-523 Plastic-Encapsulated Diodes
1SS422 High Speed SWITCHING Diodes
FEATURES z Small surface mounting type z High Speed.
1SS422 - High Speed Switching Diodes
(LGE)
1SS422
High Speed Switching Diodes
SOD-523
Features
High reliability with high surge current handing capability.
Small package. High speed.
App.
1SS422 - High Speed Switching Diode
(PACELEADER)
1SS422
High Speed SWITCHING Diodes
.006(0.15) .0098(0.25)
.0098(0.25) .014(0.35)
SOD-523
.059(1.50) .067(1.70) .043(1.10) .051(1.30)
12
.028(0.70) .
