1SS422 Datasheet - Toshiba

1SS422 Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications Low forward voltage VF(2) = 0.23 V (typ.) @ IF = 5 mA Small package suitable for mounting on a small space 1SS422 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation Junction temperature Storage temperature range Op.

1SS422 Datasheet (316.98 KB)