2SB1682 Datasheet (Toshiba) - Silicon PNP Triple Diffused Type Transistor

2SB1682, Silicon PNP Triple Diffused Type Transistor

2SB1682 TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington power transistor) 2SB1682 ○ Power Amplifier Applications ○ High-Power Switching Applications High-breakdown voltage: VCEO = 160 V (min) Complementary to 2SD2636 Unit: mm Maximum Ratings (Tc = 25°C) Characteristic Sy Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC I