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2SB1682 Silicon PNP Triple Diffused Type Transistor

2SB1682 Description

2SB1682 TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington power transistor) 2SB1682 ○ Power Amplifier Applications ○ High-Power Switchi.

2SB1682 Applications

* ○ High-Power Switching Applications
* High-breakdown voltage: VCEO =
* 160 V (min) Complementary to 2SD2636 Unit: mm Maximum Ratings (Tc = 25°C) Characteristic Sy Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector

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Datasheet Details

Part number
2SB1682
Manufacturer
Toshiba ↗
File Size
452.27 KB
Datasheet
2SB1682-Toshiba.pdf
Description
Silicon PNP Triple Diffused Type Transistor

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Silicon PNP Triple Diffused Type Transistor Toshiba
Toshiba 2SB1682-like datasheet