Datasheet4U Logo Datasheet4U.com

2SB1688 - Silicon PNP Transistor

Datasheet Summary

Features

  • High breakdown voltage VCEO = -300V min Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB1688 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -300 -300 -5 -50 750 150 -55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector cutoff current.

📥 Download Datasheet

Datasheet preview – 2SB1688

Datasheet Details

Part number 2SB1688
Manufacturer Hitachi Semiconductor
File Size 36.17 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SB1688 Datasheet
Additional preview pages of the 2SB1688 datasheet.

📁 Similar Datasheet

  • 2SB1682 - Silicon PNP Triple Diffused Type Transistor (Toshiba)
  • 2SB1683 - PNP Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SB1685 - Silicon PNP Epitaxial Planar Transistor (Sanken Electric)
  • 2SB1686 - Silicon NPN Triple Diffused Planar Transistor (Sanken Electric)
  • 2SB1602 - TRANSISTOR (Toshiba Semiconductor)
  • 2SB1603 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB1603 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1603 - PNP Transistor (INCHANGE)
  • 2SB1603A - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB1603A - SILICON POWER TRANSISTOR (SavantIC)
Other Datasheets by Hitachi Semiconductor
  • 2SB1000 - LOW FREQUENCY POWER AMPLIFIER
  • 2SB1000A - LOW FREQUENCY POWER AMPLIFIER
  • 2SB1001 - Silicon PNP Epitaxial Transistor
  • 2SB1002 - Silicon PNP Transistor
  • 2SB1012 - Silicon PNP Epitaxial Transistor
  • 2SB1012K - Silicon PNP Epitaxial Transistor
  • 2SB1025 - Silicon PNP Transistor
  • 2SB1026 - Silicon PNP Transistor

Full PDF Text Transcription

Click to expand full text
2SB1688 Silicon PNP Epitaxial High voltage amplifier ADE-208-975A (Z) 2nd. Edition Mar. 2001 Features • High breakdown voltage VCEO = -300V min Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB1688 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -300 -300 -5 -50 750 150 -55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Symbol I CBO I CEO Emitter cutoff current Base to emitter voltage DC current transfer raito I EBO VBE hFE Min — — — — 80 — Typ — — — — — — Max -0.1 -0.1 -10 -0.75 160 -0.
Published: |