2SD687 Silicon NPN Transistor

Toshiba

Description

2SD687 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) SWITCHING APPLICATIONS.HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLI.

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Datasheet Specifications

Part number: 2SD687
Manufacturer: Toshiba ↗
File Size: 113.82 KB
Datasheet: 2SD687-Toshiba.pdf
Description: Silicon NPN Transistor

Features

* : . High DC Current Gain : hFE=2000(Min. )(VCE=2V, Ic=lA) . Low Saturation Voltage : VCE(sat) =1.5V(Max. )(I c =2A) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Collector Power Dissipation (Tc=25°C) Junctio

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2SD687 Silicon NPN Transistor Toshiba

Toshiba 2SD687-like datasheet