DF5G6M4N Datasheet - Toshiba

DF5G6M4N ESD Protection Diodes

ESD Protection Diodes Silicon Epitaxial Planar DF5G6M4N DF5G6M4N 1. General The DF5G6M4N is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. Utilizing snapback characteristics, the DF5G6M4N provides low dynamic resistance and superior protective performance. Furthermore, the DF5G6M4N is a multibit device with a flow-through type design that is easy for board layout and moun.

DF5G6M4N Features

* (1) Suitable for use with a 5.0 V signal line. (VRWM ≤ 5.5 V) (2) Protects devices with its high ESD performance. (VESD = ±20 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor d

DF5G6M4N Datasheet (244.79 KB)