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HN1A01FU - Silicon PNP Epitaxial Type Transistor

Datasheet Summary

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) High voltage: VCEO = -50 V (4) High collector current: IC = -150 mA (max) (5) High hFE: hFE = 120 to 400 (6) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ. ) 3. Packaging and Internal Circuit HN1A01FU US6 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 199.

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Datasheet Details

Part number HN1A01FU
Manufacturer Toshiba
File Size 348.85 KB
Description Silicon PNP Epitaxial Type Transistor
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Full PDF Text Transcription

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Bipolar Transistors Silicon PNP Epitaxial Type HN1A01FU 1. Applications • Low-Frequency Amplifiers 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) High voltage: VCEO = -50 V (4) High collector current: IC = -150 mA (max) (5) High hFE: hFE = 120 to 400 (6) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) 3. Packaging and Internal Circuit HN1A01FU US6 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1991-01 2021-06-30 Rev.2.0 4.
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