HN1A01FU - Silicon PNP Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	HN1A01FU
Manufacturer	Toshiba
File Size	348.85 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	HN1A01FU-Toshiba.pdf

(1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) High voltage: VCEO = -50 V (4) High collector current: IC = -150 mA (max) (5) High hFE: hFE = 120 to 400 (6) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ. ) 3. Packaging and Internal Circuit HN1A01FU US6 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 199.

📁 HN1A01FU Similar Datasheet

HN16012CG - 10/100 Base-T Single Port Transformer (Mingtek)
HN16015CG - 10/100 Base-T Single Port Transformer (Mingtek)
HN16016CG - 10/100 Base-T Single Port Transformer (Mingtek)
HN16017CG - 10/100 Base-T Single Port Transformer (Mingtek)
HN16018CG - 10/100 Base-T Single Port Transformer (Mingtek)
HN16021CG - 10/100 Base-T Single Port Transformer (Mingtek)
HN1629CG - (HN1629CG - HN1674CG) 10/100 Base-T Single Port Transformer (Mingtek)
HN16516CG - 10/100 Base-T Single Port Transformer (Mingtek)

Other Datasheets by Toshiba

Published: May 20, 2024 |