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HN1A07F Datasheet - Toshiba

HN1A07F-Toshiba.pdf

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Datasheet Details

Part number:

HN1A07F

Manufacturer:

Toshiba ↗

File Size:

137.70 KB

Description:

Silicon pnp epitaxial type transistor.

HN1A07F, Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A07F HN1A07F Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications z Excellent Currrent gain(hFE )linearity : hFE(2) =25 (min) at VCE = 6V, IC = 400mA Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base

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