Datasheet4U Logo Datasheet4U.com

HN1A02F Datasheet - Toshiba

HN1A02F-Toshiba.pdf

Preview of HN1A02F PDF
HN1A02F Datasheet Preview Page 2 HN1A02F Datasheet Preview Page 3

Datasheet Details

Part number:

HN1A02F

Manufacturer:

Toshiba ↗

File Size:

139.12 KB

Description:

Silicon pnp epitaxial type transistor.

HN1A02F, Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A02F HN1A02F Audio Frequency Power Amplifier Applications Switching applications z High hFE : hFE(1) = 120 to 400 z Low VCE(sat.) : VCE (sat) = 0.2 V (max) (IC = 400 mA, IB = 8 mA) z Small Power Motor Driver Application.

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Unit: mm Characteristic Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO

📁 Related Datasheet

📌 All Tags

Toshiba HN1A02F-like datasheet