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HN1A02F Datasheet - Toshiba

HN1A02F Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A02F HN1A02F Audio Frequency Power Amplifier Applications Switching applications z High hFE : hFE(1) = 120 to 400 z Low VCE(sat.) : VCE (sat) = 0.2 V (max) (IC = 400 mA, IB = 8 mA) z Small Power Motor Driver Application. Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Unit: mm Characteristic Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO

HN1A02F Datasheet (139.12 KB)

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Datasheet Details

Part number:

HN1A02F

Manufacturer:

Toshiba ↗

File Size:

139.12 KB

Description:

Silicon pnp epitaxial type transistor.

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HN1A02F Silicon PNP Epitaxial Type Transistor Toshiba

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