Datasheet Specifications
- Part number
- HN1C01FE
- Manufacturer
- Toshiba ↗
- File Size
- 293.27 KB
- Datasheet
- HN1C01FE-Toshiba.pdf
- Description
- Silicon NPN Epitaxial Type Transistor
Description
Bipolar Transistors Silicon NPN Epitaxial Type HN1C01FE 1.Applications * Low-Frequency Amplifiers 2..
Features
* (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) High voltage: VCEO = 50 V (4) High collector current: IC = 150 mA (max) (5) High hFE: hFE = 120 to 400 (6) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ. ) 3. Packaging and InHN1C01FE Distributors
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