HN1C01FE

The HN1C01FE is Silicon NPN Epitaxial Type Transistor designed by Toshiba.

Product Overview

Toshiba

Part number	HN1C01FE
Manufacturer	Toshiba
File Size	293.27 KB
Description	Silicon NPN Epitaxial Type Transistor
Datasheet	HN1C01FE-Toshiba.pdf
Additional preview pages of the HN1C01FE datasheet.

(1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) High voltage: VCEO = 50 V (4) High collector current: IC = 150 mA (max) (5) High hFE: hFE = 120 to 400 (6) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ. ) 3. Packaging and Internal Circuit HN1C01FE ES6 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2000-05.

📁 Similar Datasheet

HN16012CG - 10/100 Base-T Single Port Transformer (Mingtek)
HN16015CG - 10/100 Base-T Single Port Transformer (Mingtek)
HN16016CG - 10/100 Base-T Single Port Transformer (Mingtek)
HN16017CG - 10/100 Base-T Single Port Transformer (Mingtek)
HN16018CG - 10/100 Base-T Single Port Transformer (Mingtek)
HN16021CG - 10/100 Base-T Single Port Transformer (Mingtek)
HN1629CG - (HN1629CG - HN1674CG) 10/100 Base-T Single Port Transformer (Mingtek)
HN16516CG - 10/100 Base-T Single Port Transformer (Mingtek)

Other Datasheets by Toshiba

Published: May 20, 2024 |