HN1C07F Datasheet (Toshiba) - Silicon NPN Epitaxial Type Transistor

HN1C07F, Silicon NPN Epitaxial Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C07F HN1C07F Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications Unit: mm z Excellent Currrent gain(hFE ) linearity : hFE(2) = 25 (min) at VCE = 6V, IC = 400mA Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage Collector current Base cu