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HN1C03F Datasheet - Toshiba

HN1C03F Silicon NPN Epitaxial Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C03F For Muting And Switching Applications z Including two devices in SM6 (Super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE = 2V, IC = 4mA) z Low on resistance: RON = 1Ω (typ.)(IB = 5mA) HN1C03F Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-.

HN1C03F Datasheet (368.05 KB)

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Datasheet Details

Part number:

HN1C03F

Manufacturer:

Toshiba ↗

File Size:

368.05 KB

Description:

Silicon npn epitaxial type transistor.

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HN1C03F Silicon NPN Epitaxial Type Transistor Toshiba

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