HN1D05FE Datasheet | Toshiba

Features (1) Small package (2) Low reverse current: IR(2) = 0.1 µA (max) (3) Low forward voltage: VF(2) = 1.0 V (typ.) (4) Fast reverse recovery time: trr = 0.5 µs (typ.) (5) Small total capacitance: Ct = 4.3 p F (typ.) 3. Packaging and Internal Circuit ES6 1: Anode1 2: N.C. 3: Cathode2 4: Anode2 5: N.C. 6: Cathode1 ©2022-2023 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2023-10 2023-10-27 Rev.1.0 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 - ) Characteristics Symbol Note Rating Unit Peak reverse voltage Reverse voltage Peak forward current 300 m A Average rectified current 100 m A Power dissipation PD (Note 1) 100 m W Non-repetitive peak forward surge current IFSM (Note 2) Junction temperature Tj - Storage temperature Tstg -55 to 150 - Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate,...