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HN2E04F Datasheet - Toshiba

HN2E04F MULTI CHIP DISCRETE DEVICE

TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E04F HN2E04F Super High Speed Switching Application Audio Frequency Amplifier Application Audio Low Noise Amplifier Application Q1 High Voltage : VCEO = 120V High DC Current Gain : hFE = 200 to 700 Good hFE Linearity Q2 : hFE(IC = 0.1mA)/ hFE(IC = 2mA) = 0.95 Low Forward Voltage Drop : VF(3) = 0.98V (typ.) Fast Reverse Recovery Time : trr = 1.6ns (typ.) Low Total Capacitance : CT = 0.5pF (typ.) Q1 (Transistor) Q2 (Di.

HN2E04F Datasheet (572.15 KB)

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Datasheet Details

Part number:

HN2E04F

Manufacturer:

Toshiba ↗

File Size:

572.15 KB

Description:

Multi chip discrete device.

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HN2E04F MULTI CHIP DISCRETE DEVICE Toshiba

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