Datasheet Specifications
- Part number
- HN2S01F
- Manufacturer
- Toshiba ↗
- File Size
- 227.17 KB
- Datasheet
- HN2S01F-Toshiba.pdf
- Description
- Silicon Epitaxial Schottky Barrier Type Diode
Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application HN2S01F Unit: mm z HN2S01F is composed of.
Applications
* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor RelHN2S01F Distributors
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