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HN2S01F Datasheet - Toshiba

HN2S01F Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application HN2S01F Unit: mm z HN2S01F is composed of 3 independent diodes. z Low reverse current: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 mA Surge current (10ms) IFSM 1

HN2S01F Datasheet (227.17 KB)

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Datasheet Details

Part number:

HN2S01F

Manufacturer:

Toshiba ↗

File Size:

227.17 KB

Description:

Silicon epitaxial schottky barrier type diode.

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HN2S01F Silicon Epitaxial Schottky Barrier Type Diode Toshiba

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