HN2S02JE Datasheet (Toshiba) - Silicon Epitaxial Schottky Barrier Type Diode

HN2S02JE, Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE HN2S02JE High-speed Switching Applications z HN2S02JE is composed of two independent diodes.

z Low forward voltage: VF (3) = 0.54V (typ.) z Low reverse current: IR = 5μA (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 mA Average forward current Surge current (10ms) Pow