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HN2S02JE Datasheet - Toshiba

HN2S02JE Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE HN2S02JE High-speed Switching Applications z HN2S02JE is composed of two independent diodes. z Low forward voltage: VF (3) = 0.54V (typ.) z Low reverse current: IR = 5μA (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 mA Average forward current Surge current (10ms) Pow.

HN2S02JE Datasheet (192.42 KB)

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Datasheet Details

Part number:

HN2S02JE

Manufacturer:

Toshiba ↗

File Size:

192.42 KB

Description:

Silicon epitaxial schottky barrier type diode.

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HN2S02JE Silicon Epitaxial Schottky Barrier Type Diode Toshiba

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