• Part: HN2S02JE
  • Manufacturer: Toshiba
  • Size: 192.42 KB
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Toshiba datasheets

HN2S02JE Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE HN2S02JE High-speed Switching Applications z HN2S02JE is posed of two independent diodes. VF (3) = 0.54V (typ.) z Low reverse current: Using continuously under heavy loads (e.g.