Part number:
HN2S02JE
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Description:
Silicon epitaxial schottky barrier type diode.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
HN2S02JE
HN2S02JE
High-speed Switching Appli.
cations
z HN2S02JE is composed of two independent diodes. z Low forward voltage: VF (3) = 0.54V (typ.