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HN2S04FU Datasheet - Toshiba

HN2S04FU Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Epitaxial Schottky Barrier Type HN2S04FU HN2S04FU High-Speed Switching Application Unit: mm z The HN2S04FU consists of three separate diodes. z Low forward voltage: VF (3) = 0.36V (typ.) z Low reverse current: IR= 50 μA (max) z Small total capacitance: CT = 46 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 450 mA Average f.

HN2S04FU Datasheet (203.58 KB)

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Datasheet Details

Part number:

HN2S04FU

Manufacturer:

Toshiba ↗

File Size:

203.58 KB

Description:

Epitaxial schottky barrier type diode.

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HN2S04FU Epitaxial Schottky Barrier Type Diode Toshiba

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