HN2S04FU Datasheet (Toshiba) - Epitaxial Schottky Barrier Type Diode

HN2S04FU, Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Epitaxial Schottky Barrier Type HN2S04FU HN2S04FU High-Speed Switching Application Unit: mm z The HN2S04FU consists of three separate diodes.

z Low forward voltage: VF (3) = 0.36V (typ.) z Low reverse current: IR= 50 μA (max) z Small total capacitance: CT = 46 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 450 mA Average f