HN2S03FU Datasheet (Toshiba) - Silicon Epitaxial Schottky Barrier Type Diode

HN2S03FU, Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03FU HN2S03FU High Speed Switching Application Unit: mm z HN2S03FU is composed of 3 independent diodes.

z Low forward voltage : VF (3) = 0.50V (typ.) z Low reverse current : IR= 0.5μA (max) z Small total capacitance : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 100