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HN2S03FU Datasheet - Toshiba

HN2S03FU Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03FU HN2S03FU High Speed Switching Application Unit: mm z HN2S03FU is composed of 3 independent diodes. z Low forward voltage : VF (3) = 0.50V (typ.) z Low reverse current : IR= 0.5μA (max) z Small total capacitance : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 100 .

HN2S03FU Datasheet (204.51 KB)

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Datasheet Details

Part number:

HN2S03FU

Manufacturer:

Toshiba ↗

File Size:

204.51 KB

Description:

Silicon epitaxial schottky barrier type diode.

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HN2S03FU Silicon Epitaxial Schottky Barrier Type Diode Toshiba

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