SSM6N35AFE Silicon N-Channel MOSFET

Toshiba

Description

MOSFETs Silicon N-Channel MOS SSM6N35AFE 1.Applications * High-Speed Switching * Analog Switches 2..

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Datasheet Specifications

Part number: SSM6N35AFE
Manufacturer: Toshiba ↗
File Size: 225.05 KB
Datasheet: SSM6N35AFE-Toshiba.pdf
Description: Silicon N-Channel MOSFET

Features

* (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 9.0 Ω (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 Ω (max) (@VGS = 1.5 V, ID = 20 mA) RDS(ON) = 2.4 Ω (max) (@VGS = 1.8 V, ID = 150 mA) RDS(ON) = 1.6 Ω (max) (@VGS = 2.5 V, ID = 150 mA) RDS(ON) = 1.1 Ω (max) (@VGS = 4.5 V, ID = 150 mA)

Applications

* High-Speed Switching

SSM6N35AFE Distributors

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SSM6N35AFE Silicon N-Channel MOSFET Toshiba

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