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SSM6N35AFE

Silicon N-Channel MOSFET

SSM6N35AFE Features

* (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 9.0 Ω (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 Ω (max) (@VGS = 1.5 V, ID = 20 mA) RDS(ON) = 2.4 Ω (max) (@VGS = 1.8 V, ID = 150 mA) RDS(ON) = 1.6 Ω (max) (@VGS = 2.5 V, ID = 150 mA) RDS(ON) = 1.1 Ω (max) (@VGS = 4.5 V, ID = 150 mA)

SSM6N35AFE Datasheet (225.05 KB)

Preview of SSM6N35AFE PDF

Datasheet Details

Part number:

SSM6N35AFE

Manufacturer:

Toshiba ↗

File Size:

225.05 KB

Description:

Silicon n-channel mosfet.

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SSM6N35AFE Silicon N-Channel MOSFET Toshiba

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