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SSM6N61NU Datasheet - Toshiba

SSM6N61NU Silicon N-Channel MOSFET

SSM6N61NU Features

* (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 108 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Assignment UDFN6 SSM6N61NU 1. Source1 2. Gate1 3. Drain2 4. So

SSM6N61NU Datasheet (340.07 KB)

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Datasheet Details

Part number:

SSM6N61NU

Manufacturer:

Toshiba ↗

File Size:

340.07 KB

Description:

Silicon n-channel mosfet.

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SSM6N61NU Silicon N-Channel MOSFET Toshiba

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