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SSM6N61NU - Silicon N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	SSM6N61NU
Manufacturer	Toshiba ↗
File Size	340.07 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM6N61NU-Toshiba.pdf

SSM6N61NU Product details

Features

(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 108 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Assignment UDFN6 SSM6N61NU 1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1 ©2016 Toshiba Corporation 1 Start of commercial production 2015-12 2016-08-31 Rev.3.0 SSM6N61NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ).

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Published: Dec 29, 2023 |