SSM6N61NU Silicon N-Channel MOSFET

Toshiba

Description

MOSFETs Silicon N-Channel MOS SSM6N61NU 1.Applications * Power Management Switches * DC-DC Converters 2..

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Datasheet Specifications

Part number: SSM6N61NU
Manufacturer: Toshiba ↗
File Size: 340.07 KB
Datasheet: SSM6N61NU-Toshiba.pdf
Description: Silicon N-Channel MOSFET

Features

* (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 108 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Assignment UDFN6 SSM6N61NU 1. Source1 2. Gate1 3. Drain2 4. So

Applications

* Power Management Switches

SSM6N61NU Distributors

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SSM6N61NU Silicon N-Channel MOSFET Toshiba

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