SSM6N15AFE Datasheet - Toshiba Semiconductor

SSM6N15AFE Silicon N-Channel MOSFET

SSM6N15AFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFE Load Switching Applications 2.5 V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4.0 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) 1.6±0.05 1.2±0.05 Unit: mm 1 6 1.6±0.05 1.0±0.05 0.5 0.5 0.2±0.05 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit 2 5 3 4 0.12±0.05 0.55±0.05 Drain-Source voltage VDSS 30 .

SSM6N15AFE-ToshibaSemiconductor.pdf