SSM6N15AFE Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

SSM6N15AFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFE Load Switching Applications * 2.5 V drive

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Datasheet Specifications

Part number: SSM6N15AFE
Manufacturer: Toshiba ↗ Semiconductor
File Size: 185.21 KB
Datasheet: SSM6N15AFE-ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Applications

* 2.5 V drive
* N-ch 2-in-1
* Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4.0 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) 1.6±0.05 1.2±0.05 Unit: mm 1 6 1.6±0.05 1.0±0.05 0.5 0.5 0.2±0.05 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol R

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SSM6N15AFE Silicon N-Channel MOSFET Toshiba Semiconductor

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