SSM6N15FU Datasheet - Toshiba Semiconductor

SSM6N15FU N-Channel MOSFET

SSM6N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FU High Speed Switching Applications Analog Switching Applications Unit: mm Small package Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V Drain current DC Pulse ID 100 mA IDP 200 Drain power di.

SSM6N15FU_ToshibaSemiconductor.pdf