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SSM6N67NU Datasheet - Toshiba

SSM6N67NU Silicon N-Channel MOSFET

SSM6N67NU Features

* (1) AEC-Q101 qualified (Note 1) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Note 1: For detail information, please contact to our sales. 3. Packaging and Pin Assign

SSM6N67NU Datasheet (259.81 KB)

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Datasheet Details

Part number:

SSM6N67NU

Manufacturer:

Toshiba ↗

File Size:

259.81 KB

Description:

Silicon n-channel mosfet.

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