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SSM6N67NU - Silicon N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	SSM6N67NU
Manufacturer	Toshiba ↗
File Size	259.81 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM6N67NU-Toshiba.pdf

SSM6N67NU Product details

Features

(1) AEC-Q101 qualified (Note 1) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Note 1: For detail information, please contact to our sales. 3. Packaging and Pin Assignment UDFN6 SSM6N67NU 1. Source 1 2. Gate 1 3. Drain 2 4. Source 2 5. Gate 2 6. Drain 1 ©2017 Toshiba Electronic Devices & Storage Corporation 1 2017-12-18 Rev.1.0 SSM6N67NU 4. Absolute Maximum Ra.

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Published: Jul 27, 2019 |