SSM6N03FE Datasheet - Toshiba Semiconductor

SSM6N03FE N-Channel MOSFET

SSM6N03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N03FE High Speed Switching Applications Analog Switch Applications Unit: mm Input impedance is high. Driving current is extremely low. Can be directly driven by a CMOS device even at low voltage due to low gate threshold voltage. High-speed switching. Housed in a ultra-small package which is suitable for high density mounting. Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol .

SSM6N03FE_ToshibaSemiconductor.pdf