Part number:
SSM6N09FU
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
168.49 KB
Description:
N-channel mosfet.
SSM6N09FU_ToshibaSemiconductor.pdf
Datasheet Details
SSM6N09FU_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
SSM6N09FU
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
168.49 KB
Description:
N-channel mosfet.
SSM6N09FU, N-Channel MOSFET
SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications Unit: mm Small package Low Drain-Source ON resistance.
: Ron = 0.7 Ω (max) (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V Drain current DC Pulse ID 400 mA IDP 800 Drain power dissipation (Ta = 2
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