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SSM6N09FU N-Channel MOSFET

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Description

SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications Unit: mm * Small package <.

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Applications

* Unit: mm
* Small package
* Low Drain-Source ON resistance. : Ron = 0.7 Ω (max) (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±

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