SSM6N09FU Datasheet - Toshiba Semiconductor

SSM6N09FU N-Channel MOSFET

SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications Unit: mm Small package Low Drain-Source ON resistance. : Ron = 0.7 Ω (max) (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V Drain current DC Pulse ID 400 mA IDP 800 Drain power dissipation (Ta = 2.

SSM6N09FU_ToshibaSemiconductor.pdf