SSM6N15AFU Datasheet - Toshiba Semiconductor

SSM6N15AFU N-Channel MOSFET

SSM6N15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFU Load Switching Applications 2.5 V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4.0 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) Unit: mm (Q1, Q2 Common) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP.

SSM6N15AFU Features

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SSM6N15AFU-ToshibaSemiconductor.pdf