Datasheet Specifications
- Part number
- SSM6N15AFU
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 204.52 KB
- Datasheet
- SSM6N15AFU-ToshibaSemiconductor.pdf
- Description
- N-Channel MOSFET
Description
SSM6N15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFU Load Switching Applications * * .
Features
* AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOApplications
* 2.5 V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4.0 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) Unit: mm (Q1, Q2 Common) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Power dissipationSSM6N15AFU Distributors
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