SSM6N56FE N-Channel MOSFET

Toshiba

Description

MOSFETs Silicon N-Channel MOS SSM6N56FE 1.Applications * High-Speed Switching 2..

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Datasheet Specifications

Part number: SSM6N56FE
Manufacturer: Toshiba ↗
File Size: 199.97 KB
Datasheet: SSM6N56FE-Toshiba.pdf
Description: N-Channel MOSFET

Features

* (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V, ID = 600 mA) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V, ID = 200 mA) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V, ID = 50 mA) 3. Packaging and Pin Assignmen

SSM6N56FE Distributors

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SSM6N56FE N-Channel MOSFET Toshiba

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