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SSM6N56FE Datasheet - Toshiba

SSM6N56FE N-Channel MOSFET

SSM6N56FE Features

* (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V, ID = 600 mA) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V, ID = 200 mA) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V, ID = 50 mA) 3. Packaging and Pin Assignmen

SSM6N56FE Datasheet (199.97 KB)

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Datasheet Details

Part number:

SSM6N56FE

Manufacturer:

Toshiba ↗

File Size:

199.97 KB

Description:

N-channel mosfet.

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SSM6N56FE N-Channel MOSFET Toshiba

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