SSM6N57NU N-Channel MOSFET

Toshiba Semiconductor

Description

MOSFETs Silicon N-Channel MOS SSM6N57NU 1.Applications * Power Management Switches * DC-DC Converters 2..

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Datasheet Specifications

Part number: SSM6N57NU
Manufacturer: Toshiba ↗ Semiconductor
File Size: 268.56 KB
Datasheet: SSM6N57NU-ToshibaSemiconductor.pdf
Description: N-Channel MOSFET

Features

* (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) 3. Packaging and Internal Circuit UDFN6 SSM6N57NU 1. Source1 (S1) 2. Gate1 (G1) 3. Drain2 (D2) 4. Source2 (S2) 5. Gate2

Applications

* Power Management Switches

SSM6N57NU Distributors

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SSM6N57NU N-Channel MOSFET Toshiba Semiconductor

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