SSM6N55NU - N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	SSM6N55NU
Manufacturer	Toshiba ↗ Semiconductor
File Size	310.55 KB
Description	N-Channel MOSFET
Datasheet	SSM6N55NU-ToshibaSemiconductor.pdf

(1) 4.5V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 46 mΩ (max) (@VGS = 10 V) RDS(ON) = 64 mΩ (max) (@VGS = 4.5 V) 3. Packaging and Pin Assignment UDFN6 SSM6N55NU 1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1 ©2023-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2011-11 2024-08-26 Rev.4.0 SSM6N55NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) (Q1,Q2 Common) Characteristics Symbol.

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Published: Sep 18, 2014 |