SSM6N58NU N-Channel MOSFET

Toshiba Semiconductor

Description

MOSFETs Silicon N-Channel MOS SSM6N58NU 1.Applications * Power Management Switches * DC-DC Converters 2..

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Datasheet Specifications

Part number: SSM6N58NU
Manufacturer: Toshiba ↗ Semiconductor
File Size: 269.83 KB
Datasheet: SSM6N58NU-ToshibaSemiconductor.pdf
Description: N-Channel MOSFET

Features

* (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 84 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 117 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 180 mΩ (max) (@VGS = 1.8 V) 3. Packaging and Pin Assignment UDFN6 SSM6N58NU 1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1 ©2019-2021

Applications

* Power Management Switches

SSM6N58NU Distributors

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SSM6N58NU N-Channel MOSFET Toshiba Semiconductor

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