SSM6N05FU Datasheet - Toshiba Semiconductor

SSM6N05FU N-Channel MOSFET

SSM6N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N05FU High Speed Switching Applications Unit: mm Small package Low on resistance : Ron = 0.8 Ω (max) (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V) Low gate threshold voltage Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±12 V Drain current DC Pulse ID 400 mA IDP 800 Drain power dissipation (Ta =.

SSM6N05FU_ToshibaSemiconductor.pdf