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SSM6N05FU N-Channel MOSFET

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Description

SSM6N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N05FU High Speed Switching Applications Unit: mm * Small package *.

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Applications

* Unit: mm
* Small package
* Low on resistance : Ron = 0.8 Ω (max) (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V)
* Low gate threshold voltage Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS

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