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SSM6N04FU Datasheet - Toshiba Semiconductor

SSM6N04FU N-Channel MOSFET

www.DataSheet4U.com SSM6N04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N04FU High Speed Switch Applications With built-in gate-source resistor: RGS = 1 MΩ (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package Unit: mm Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS I.

SSM6N04FU Datasheet (202.69 KB)

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Datasheet Details

Part number:

SSM6N04FU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

202.69 KB

Description:

N-channel mosfet.

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SSM6N04FU N-Channel MOSFET Toshiba Semiconductor

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