SSM6N15FE Datasheet - Toshiba Semiconductor

SSM6N15FE MOSFET

SSM6N15FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE High Speed Switching Applications Analog Switching Applications Small package Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Unit: mm (Q1, Q2 Common) Drain-Source voltage Gate-Source voltage Drain current Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg Rating 30 ±20 100 200 150 150 55~150 Un.

SSM6N15FE Features

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SSM6N15FE-ToshibaSemiconductor.pdf