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SSM6N35AFU - Silicon N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	SSM6N35AFU
Manufacturer	Toshiba ↗
File Size	248.73 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM6N35AFU-Toshiba.pdf

SSM6N35AFU Product details

Features

(1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 9.0 Ω (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 Ω (max) (@VGS = 1.5 V, ID = 20 mA) RDS(ON) = 2.4 Ω (max) (@VGS = 1.8 V, ID = 150 mA) RDS(ON) = 1.6 Ω (max) (@VGS = 2.5 V, ID = 150 mA) RDS(ON) = 1.1 Ω (max) (@VGS = 4.5 V, ID = 150 mA) 3. Packaging and Pin Assignment US6 SSM6N35AFU 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2016 Toshiba Corporation 1 Start of commercial production 2016-10 2016-11-21 Rev.

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Published: Dec 28, 2023 |