SSM6N36TU Datasheet - Toshiba Semiconductor

SSM6N36TU MOSFET

SSM6N36TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N36TU ○ High-Speed Switching Applications 1.5-V drive Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) 0.65 0.65 2.0±0.1 1.3±0.1 2.1±0.1 1.7±0.1 Unit: mm : Ron = 0.66 Ω (max) (@VGS = 4.5 V) : Ron = 0.63 Ω (max) (@VGS = 5.0 V) 2 3 5 4 Characteristics Drain source voltage Gate source voltage Drain current Drain power dissipation Channel temperat.

SSM6N36TU Features

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SSM6N36TU Datasheet (190.65 KB)