SSM6N35FU Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

SSM6N35FU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N35FU ○ High-Speed Switching Applications ○ Analog Switch Applications Unit.

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Datasheet Specifications

Part number: SSM6N35FU
Manufacturer: Toshiba ↗ Semiconductor
File Size: 203.54 KB
Datasheet: SSM6N35FU-ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Applications

* ○ Analog Switch Applications Unit: mm
* 1.2-V drive
* N-ch 2-in-1
* Low ON-resistance: RDS(ON) = 20 Ω (max) (@VGS = 1.2 V) RDS(ON) = 8 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4 Ω (max) (@VGS = 2.5 V) RDS(ON) = 3 Ω (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2

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SSM6N35FU Silicon N-Channel MOSFET Toshiba Semiconductor

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