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TC58BYG0S3HBAI4 1-GBIT (128M x 8 BIT) CMOS NAND E2PROM

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Description

TC58BYG0S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM .
The TC58BYG0S3HBAI4 is a single 1.

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Features

* Organization x8 Memory cell array 2112 × 64K × 8 Register 2112× 8 Page size 2112 bytes Block size (128K + 4K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read
* Mode control Serial input/output Command contro

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1-GBIT 128M BIT CMOS NAND E2PROM Toshiba
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