Datasheet4U Logo Datasheet4U.com

TC58BYG1S3HBAI4

2-GBIT (256M x 8 BIT) CMOS NAND E2PROM

TC58BYG1S3HBAI4 Features

* Organization x8 Memory cell array 2112 × 128K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read

TC58BYG1S3HBAI4 General Description

The TC58BYG1S3HBAI4 is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks. The device has a 2112-byte static register which allows program and read data to be transferred between .

TC58BYG1S3HBAI4 Datasheet (2.44 MB)

Preview of TC58BYG1S3HBAI4 PDF

Datasheet Details

Part number:

TC58BYG1S3HBAI4

Manufacturer:

Toshiba ↗

File Size:

2.44 MB

Description:

2-gbit (256m x 8 bit) cmos nand e2prom.

📁 Related Datasheet

TC58BYG1S3HBAI6 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM (Toshiba)

TC58BYG0S3HBAI4 1-GBIT (128M x 8 BIT) CMOS NAND E2PROM (Toshiba)

TC58BYG0S3HBAI6 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM (Toshiba)

TC58BYG2S0HBAI4 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM (Toshiba)

TC58BYG2S0HBAI6 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM (Toshiba)

TC58BVG0S3HBAI4 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM (Toshiba)

TC58BVG0S3HBAI6 1G-BIT (128M x 8 BIT) CMOS NAND E2PROM (Toshiba)

TC58BVG0S3HTA00 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM (Toshiba)

TC58BVG0S3HTAI0 1 GBIT (128M x 8-BIT) CMOS NAND E2PROM (Toshiba)

TC58BVG1S3HBAI4 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM (Toshiba)

TAGS

TC58BYG1S3HBAI4 2-GBIT 256M BIT CMOS NAND E2PROM Toshiba

Image Gallery

TC58BYG1S3HBAI4 Datasheet Preview Page 2 TC58BYG1S3HBAI4 Datasheet Preview Page 3

TC58BYG1S3HBAI4 Distributor