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TC58BYG0S3HBAI6

1 GBIT (128M x 8 BIT) CMOS NAND E2PROM

TC58BYG0S3HBAI6 Features

* Organization x8 Memory cell array 2112 × 64K × 8 Register 2112× 8 Page size 2112 bytes Block size (128K + 4K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read

* Mode control Serial input/output Command contro

TC58BYG0S3HBAI6 General Description

The TC58BYG0S3HBAI6 is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has a 2112-byte static register which allows program and read data to be transferred between .

TC58BYG0S3HBAI6 Datasheet (313.81 KB)

Preview of TC58BYG0S3HBAI6 PDF

Datasheet Details

Part number:

TC58BYG0S3HBAI6

Manufacturer:

Toshiba ↗

File Size:

313.81 KB

Description:

1 gbit (128m x 8 bit) cmos nand e2prom.

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TAGS

TC58BYG0S3HBAI6 GBIT 128M BIT CMOS NAND E2PROM Toshiba

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