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TC58BYG2S0HBAI4 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

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Description

TC58BYG2S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM .
The TC58BYG2S0HBAI4 is a single 1.

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Features

* Organization Memory cell array Register Page size Block size x8 4224 × 128K × 8 4224 × 8 4224 bytes (256K + 8K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read

TC58BYG2S0HBAI4 Distributors

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TC58BYG2S0HBAI4 GBIT 512M BIT CMOS NAND E2PROM Toshiba
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