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TC58BYG2S0HBAI4 Datasheet - Toshiba

4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

TC58BYG2S0HBAI4 Features

* Organization Memory cell array Register Page size Block size x8 4224 × 128K × 8 4224 × 8 4224 bytes (256K + 8K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read

TC58BYG2S0HBAI4 General Description

The TC58BYG2S0HBAI4 is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks. The device has a 4224-byte static register which allows program and read data to be transferred between.

TC58BYG2S0HBAI4 Datasheet (347.71 KB)

Preview of TC58BYG2S0HBAI4 PDF

Datasheet Details

Part number:

TC58BYG2S0HBAI4

Manufacturer:

Toshiba ↗

File Size:

347.71 KB

Description:

4 gbit (512m x 8 bit) cmos nand e2prom.

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TAGS

TC58BYG2S0HBAI4 GBIT 512M BIT CMOS NAND E2PROM Toshiba

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