TC58BYG2S0HBAI4 Datasheet, E2prom, Toshiba

✔ TC58BYG2S0HBAI4 Features

Organization Memory cell array Register Page size Block size x8 4224 × 128K × 8 4224 × 8 4224 bytes (256K + 8K) bytes
Modes Read, Reset, Auto Page Program, Auto Blo

✔ TC58BYG2S0HBAI4 Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems whi

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TC58BYG2S0HBAI4

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📄 Datasheet

Description:

4 gbit (512m x 8 bit) cmos nand e2prom. The TC58BYG2S0HBAI4 is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E

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KIOXIA

IC FLASH 4GBIT PARALLEL 63TFBGA

DigiKey

TC58BYG2S0HBAI4

210 In Stock

Qty : 1050 units

Unit Price : $3.74

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TC58BYG2S0HBAI4 GBIT 512M BIT CMOS NAND E2PROM Toshiba