TC58BYG2S0HBAI4 Datasheet - Toshiba

TC58BYG2S0HBAI4 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

The TC58BYG2S0HBAI4 is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks. The device has a 4224-byte static register which allows program and read data to be transferred between.

TC58BYG2S0HBAI4 Features

* Organization Memory cell array Register Page size Block size x8 4224 × 128K × 8 4224 × 8 4224 bytes (256K + 8K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read

TC58BYG2S0HBAI4-Toshiba.pdf