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TK11P65W Datasheet - Toshiba

TK11P65W N-Channel MOSFET

TK11P65W Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit TK11P65W DPAK 1: Gate 2: Drain (Heatsink) 3: Source Sta

TK11P65W Datasheet (241.23 KB)

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Datasheet Details

Part number:

TK11P65W

Manufacturer:

Toshiba ↗

File Size:

241.23 KB

Description:

N-channel mosfet.

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TK11P65W N-Channel MOSFET Toshiba

TK11P65W Distributor