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TK11P65W - N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	TK11P65W
Manufacturer	Toshiba
File Size	241.23 KB
Description	N-Channel MOSFET
Datasheet	TK11P65W-Toshiba.pdf

TK11P65W Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit TK11P65W DPAK 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2014-05 1 2014-09-17 Rev.3.0 TK11P65W 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source vol.

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Published: Nov 9, 2020 |