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TK3R1E04PL - Silicon N-channel MOSFET

Toshiba

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Datasheet Details

Part number	TK3R1E04PL
Manufacturer	Toshiba ↗
File Size	502.70 KB
Description	Silicon N-channel MOSFET
Datasheet	TK3R1E04PL-Toshiba.pdf

TK3R1E04PL Product details

Features

(1) High-speed switching (2) Small gate charge: QSW = 17.5 nC (typ. ) (3) Small output charge: Qoss = 42 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK3R1E04PL TO-220 1: Gate 2: Drain (heatsink) 3: Source ©2016-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production.

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Published: Aug 7, 2019 |