Datasheet Specifications
- Part number
- TK3R3E03GL
- Manufacturer
- Toshiba ↗
- File Size
- 432.53 KB
- Datasheet
- TK3R3E03GL-Toshiba.pdf
- Description
- Silicon N-Channel MOSFET
Description
MOSFETs Silicon N-Channel MOS (U-MOS-H) TK3R3E03GL 1.Applications * Switching Voltage Regulators 2..Features
* (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (3) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID =0.5 mA) 3. Packaging and Internal Circuit TK3R3E03GL 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. AbsolutTK3R3E03GL Distributors
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