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TK3R3E03GL

Silicon N-Channel MOSFET

TK3R3E03GL Features

* (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (3) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID =0.5 mA) 3. Packaging and Internal Circuit TK3R3E03GL 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolut

TK3R3E03GL Datasheet (432.53 KB)

Preview of TK3R3E03GL PDF

Datasheet Details

Part number:

TK3R3E03GL

Manufacturer:

Toshiba ↗

File Size:

432.53 KB

Description:

Silicon n-channel mosfet.

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TK3R3E03GL Silicon N-Channel MOSFET Toshiba

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