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TK3R9E10PL Datasheet - Toshiba

TK3R9E10PL Silicon N-Channel MOSFET

TK3R9E10PL Features

* (1) High-speed switching (2) Small gate charge: QSW = 26 nC (typ.) (3) Small output charge: Qoss = 99 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID

TK3R9E10PL Datasheet (625.22 KB)

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Datasheet Details

Part number:

TK3R9E10PL

Manufacturer:

Toshiba ↗

File Size:

625.22 KB

Description:

Silicon n-channel mosfet.

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TK3R9E10PL Silicon N-Channel MOSFET Toshiba

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