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TK6P60W

Silicon N-channel MOSFET

TK6P60W Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.68 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.31 mA) 3. Packaging and Internal Circuit TK6P60W DPAK 1: Gate 2: Drain (Heatsink) 3: Source Star

TK6P60W Datasheet (240.19 KB)

Preview of TK6P60W PDF

Datasheet Details

Part number:

TK6P60W

Manufacturer:

Toshiba ↗

File Size:

240.19 KB

Description:

Silicon n-channel mosfet.

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TK6P60W Silicon N-channel MOSFET Toshiba

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