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TK6P60W - Silicon N-channel MOSFET

Toshiba

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Datasheet Details

Part number	TK6P60W
Manufacturer	Toshiba ↗
File Size	240.19 KB
Description	Silicon N-channel MOSFET
Datasheet	TK6P60W-Toshiba.pdf

TK6P60W Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.68 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.31 mA) 3. Packaging and Internal Circuit TK6P60W DPAK 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2012-09 1 2014-09-17 Rev.4.0 TK6P60W 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source volta.

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Published: Jan 3, 2024 |