TK6R9P08QM Silicon N-channel MOSFET

Toshiba

Description

MOSFETs Silicon N-channel MOS (U-MOS *-H) TK6R9P08QM 1.Applications * High-Efficiency DC-DC Converters * Switching Voltage Regulat.

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Datasheet Specifications

Part number: TK6R9P08QM
Manufacturer: Toshiba ↗
File Size: 495.66 KB
Datasheet: TK6R9P08QM-Toshiba.pdf
Description: Silicon N-channel MOSFET

Features

* (1) High-speed switching (2) Small gate charge: QSW = 11.6 nC (typ. ) (3) Small output charge: Qoss = 46 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 5.5 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID

Applications

* High-Efficiency DC-DC Converters
* Switching Voltage Regulators

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TK6R9P08QM Silicon N-channel MOSFET Toshiba

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