Datasheet4U.com

TK6R9P08QM - Silicon N-channel MOSFET

Toshiba

📥 Download Datasheet

TK6R9P08QM Datasheet Preview — Preview of TK6R9P08QM PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	TK6R9P08QM
Manufacturer	Toshiba
File Size	495.66 KB
Description	Silicon N-channel MOSFET
Datasheet	TK6R9P08QM-Toshiba.pdf

TK6R9P08QM Product details

Features

(1) High-speed switching (2) Small gate charge: QSW = 11.6 nC (typ. ) (3) Small output charge: Qoss = 46 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 5.5 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK6R9P08QM DPAK 1: Gate 2: Drain (heatsink) 3: Source ©2020-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2.

📁 TK6R9P08QM Similar Datasheet

TK60A08J1 - MOSFETs (Toshiba Semiconductor)
TK60D08J1 - MOSFET (Toshiba Semiconductor)
TK60F08K3 - MOSFETs (Toshiba Semiconductor)
TK60J25D - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK60P03M1 - MOSFETs (Toshiba Semiconductor)
TK60S06K3L - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK61023 - VOLTAGE DETECTOR (TOKO)
TK61023STL - VOLTAGE DETECTOR (TOKO)

Other Datasheets by Toshiba

TK6R4E10PL - Silicon N-channel MOSFET
TK6R7A10PL - Silicon N-channel MOSFET
TK6R7P06PL - Silicon N-Channel MOSFET
TK6R8A08QM - Silicon N-channel MOSFET
TK60F10N1L - Silicon N-channel MOSFET
TK60S10N1L - Silicon N-channel MOSFET

Published: Jan 3, 2024 |