TK7E80W Datasheet - Toshiba

TK7E80W, Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (DTMOS) TK7E80W 1.

Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.795 Ω (typ.
) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.28 mA) 3. Packaging and Internal Circuit TK7E80W 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. Abso

TK7E80W-Toshiba.pdf