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TPH1R712MD

Silicon P-Channel MOSFET

TPH1R712MD Features

* (1) Low drain-source on-resistance: RDS(ON) = 1.35 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPH1R712MD 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain SOP Ad

TPH1R712MD Datasheet (801.05 KB)

Preview of TPH1R712MD PDF

Datasheet Details

Part number:

TPH1R712MD

Manufacturer:

Toshiba ↗

File Size:

801.05 KB

Description:

Silicon p-channel mosfet.
MOSFETs Silicon P-Channel MOS (U-MOS) TPH1R712MD 1. Applications

* Lithium-Ion Secondary Batteries

* Power Management Switches 2. Fea.

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TPH1R712MD Silicon P-Channel MOSFET Toshiba

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