TPH1R712MD Datasheet, Mosfet, Toshiba

TPH1R712MD Features

• Mosfet (1) Low drain-source on-resistance: RDS(ON) = 1.35 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS =

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Part number:

TPH1R712MD

Manufacturer:

Toshiba ↗

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801.05kb

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📄 Datasheet

Description:

Silicon p-channel mosfet.

TPH1R712MD Application

• Applications
• Lithium-Ion Secondary Batteries
• Power Management Switches 2. Features (1) Low drain-source on-resistance: RDS(ON) =

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TPH1R712MD

Toshiba

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