TPH1R712MD Datasheet - Toshiba

TPH1R712MD, Silicon P-Channel MOSFET

MOSFETs Silicon P-Channel MOS (U-MOS) TPH1R712MD 1.Applications * Lithium-Ion Secondary Batteries * Power Management Switches 2.Fea.

Features

* (1) Low drain-source on-resistance: RDS(ON) = 1.35 mΩ (typ. ) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPH1R712MD 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain SOP Ad

Applications

* Lithium-Ion Secondary Batteries

TPH1R712MD-Toshiba.pdf